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  www.cj-elec.com b,apr,2014 1 sot-553 jiangsu changjiang electronic s technology co., ltd sot-553 plastic-encapsulate diodes CESD5V0L4 quad-direction esd protection array description designed to protect voltage sensitive electronic components from esd and other transients. excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protecti on on designs that are exposed to esd. the combination of small size, low capaci tance, and high level of esd protection makes them a flexible solution for applic ations such as hdmi, display port tm, and mddi interfaces. it is designed to replac e multiplayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. features ? uni-directional esd protection of four lines ? low reverse stand ? off voltage: 5v ? low reverse clamping voltage ? low leakage current ? excellent package:1.6mm 1.2mm 0.6mm ? fast response time ? jesd22-a114-b esd rating of class 3b per human body model ? iec 61000-4-2 level 4 esd protection applications ? computers and peripherals ? audio and video equipment ? cellular handsets and accessories ? portable electronics ? other electronics equipments communication systems marking 42 = device code solid dot=pin1 indicator front side
changjiang elec.tech. CESD5V0L4 www.cj-elec.com 2 b,apr,2014 maximum ratings ( t a =25 unless otherwise noted ) parameter symbol limit unit iec 61000-4-2 esd voltage air model contact model v esd (1) 25 kv 25 jesd22-a114-b esd voltage per human body model 16 esd voltage machine model 0.4 peak pulse power p pp (2) 60 w peak pulse current i pp (2) 5 a lead solder temperature ? maximum (10 second duration) t l 260 junction temperature t j 150 storage temperature range t stg -55 ~ +150 (1).device stressed with t en non-repetitive es d pulses, per channel(i/o to gnd). (2).non-repetitive current puls e 8/20s exponential decay waveform according to iec61000-4-5. esd standards compliance iec61000-4-2 standard jesd22-a114-b standard contact discharge air discharge level test voltage kv level test voltage kv 1 2 1 2 2 4 2 4 3 6 3 8 4 8 4 15 esd class human body discharge v 0 0 249 1a 1b 1c 250 499 500 999 1000 1999 2 2000 3999 3a 3b 4000 7999 8000 15999 esd pulse waveform according to iec61000-4-2 8/20 s pulse waveform according to iec 61000-4-5
changjiang elec.tech. CESD5V0L4 www.cj-elec.com b,apr,2014 3 electrical parameter v-i characteristics for a uni-directional tvs electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit per diode reverse stand off voltage v rwm 1 5 v breakdown voltage v ( br ) i t =1ma 6.0 7.2 v reverse leakage current i r v r wm =5v 5.0 a forward voltage v f i f =10ma 0.9 v clamping voltage v c 2 i pp =5a 12 v junction capacitance c j v r =0v,f=1mhz 30 pf (1).other voltages available upon request. (2).non-repetitive current pulse 8/20 s exponential decay waveform according to iec61000-4-5 symbol parameter v c clamping voltage @ i pp i pp peak pulse current v br breakdown voltage @ i t i t test current i r reverse leakage current @ v rwm v rwm reverse standoff voltage v f forward voltage@ i f i f forward current
changjiang elec.tech. ce sd5v0 l 4 www.cj-elec.com 4 , ap r ,201 4 012345 10 15 20 25 30 35 40 012345 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 024681 0 0 20 40 60 80 100 reverse voltage v r (v) junction capacitance c j (pf) t a =25 f=1mhz t a =25 tp=8/20us clamping voltage v c (v) reverse peak pulse current i pp (a) 200 pulsed t a = 1 00 t a =2 5 forward current i f (ma) forward voltage v f (v) reverse current i r (ma) reverse voltage v r (v) t a =25 t a =100 pulsed
changjiang elec.tech. www.c j-el ec.com 3$&.$*(287/,1( $1' 3$'/$<287,1)250$7,21 5 so t - 3 package outline dimensions so t - 3 suggested pad layout c sd l p r 2
changjiang el ec.tech. www . cj-elec.com 6 ce ap


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